Fahimeh Hassani, Hossein Tavakol,* Fariba Keshavarzipour and Amin Javaheri

Department of Chemistry, Isfahan University of Technology, Isfahan 8415683111,
Iran. E-mail: h_tavakol@cc.iut.ac.ir

We wish to report the growth of S-doped graphene (SG) with high sulfur content (5 at%, determined by XPS)
using chemical vapor deposition (CVD). The nano-sized Fe/CaCO3 was employed as a catalyst, flow ratecontrolled
acetylene gas was introduced into the CVD furnace as a carbon resource and the solid sulfur
powder was placed in the first zone of CVD as a sulfur resource. The structures, sizes and specifications
of the prepared SGs were determined and confirmed by field emission scanning electron microscopy,
transmission electron microscopy, X-ray energy dispersive spectroscopy, elemental mapping, powder
X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy analyses. The surface area
and porosity of SG were obtained via a low-temperature N2 physisorption. The presented method could
be employed as an efficient, fast and cheap technique for the preparation of SG.